2 Inch 4H-SI SiC Wafer Specifications
The 2 Inch 4H-SI SiC Wafer is a 50.8 mm semi-insulating
4H silicon carbide substrate available in Production Grade, Research Grade
and Dummy Grade. The standard wafer thickness is 330 ± 25 μm,
with semi-insulating resistivity specified at >1E5 Ω·cm.
| Parameter | Specification |
|---|---|
| Material | 4H Silicon Carbide (4H-SiC) |
| Conductivity Type | Semi-Insulating (SI) |
| Diameter | 50.8 ± 0.38 mm |
| Thickness | 330 ± 25 μm |
| Grade | Production Grade / Research Grade / Dummy Grade |
| Wafer Orientation | On-axis <0001> ±0.5° or 4.0° off-axis toward <11-20> ±0.5° |
| Resistivity | Production / Research Grade: >1E5 Ω·cm Dummy Grade: (90%) >1E5 Ω·cm |
| Micropipe Density | Production Grade: ≤5 cm-2 Research Grade: ≤15 cm-2 Dummy Grade: ≤50 cm-2 |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 15.9 ± 1.7 mm |
| Secondary Flat Length | 8.0 ± 1.7 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW from primary flat ±5.0° |
| Edge Exclusion | 1 mm |
| TTV | ≤15 μm |
| Bow | ≤25 μm |
| Warp | ≤25 μm |
| Surface Finish | Polish / CMP |
| Polished Surface Roughness | Ra ≤1 nm |
| CMP Surface Roughness | Ra ≤0.5 nm |
2 Inch 4H-SI Silicon Carbide Wafer Overview
The 2 Inch 4H-SI SiC Wafer is a 50.8 mm semi-insulating
4H silicon carbide substrate designed for applications requiring high electrical
resistivity and controlled wafer quality.
The standard substrate thickness is 330 ± 25 μm.
Production and Research Grade wafers are specified with resistivity
>1E5 Ω·cm, while the Dummy Grade specification requires
at least 90% of the wafer area to exceed 1E5 Ω·cm.
On-Axis and 4° Off-Axis 4H-SI SiC Substrates
The 2 inch 4H-SI SiC substrate is available with an
on-axis <0001> ±0.5° orientation or a
4.0° off-axis orientation toward <11-20> ±0.5°.
The required orientation should be specified when requesting a quotation
or confirming the substrate specification.
Production, Research and Dummy Grades
The 2 inch 4H-SI SiC wafer is available in
Production Grade, Research Grade and
Dummy Grade.
The specified micropipe density limits are:
- Production Grade: ≤5 cm-2
- Research Grade: ≤15 cm-2
- Dummy Grade: ≤50 cm-2
Visual Defect Criteria
| Inspection Item | Production Grade | Research Grade | Dummy Grade |
|---|---|---|---|
| Cracks | None | None | 1 allowed, ≤1 mm |
| Hex Plates | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% |
| Polytype Areas | None | Cumulative area ≤2% | Cumulative area ≤5% |
| Scratches | 3 scratches, cumulative length ≤1× wafer diameter | 5 scratches, cumulative length ≤1× wafer diameter | 8 scratches, cumulative length ≤1× wafer diameter |
| Edge Chips | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
| Contamination | None | None | None |
Note: Defect limits apply to the entire wafer surface except for the edge exclusion area.
Surface Finish and Wafer Geometry
Polished and CMP surface finishes are available for the 2 inch 4H-SI SiC wafer.
The specified polished surface roughness is Ra ≤1 nm,
while CMP surface roughness is Ra ≤0.5 nm.
Wafer geometry is controlled with TTV ≤15 μm,
Bow ≤25 μm and Warp ≤25 μm.
The specified edge exclusion is 1 mm.
How SiC Wafers Are Manufactured
SiC wafer manufacturing generally includes crystal growth, crystal orientation,
slicing, grinding, polishing, chemical mechanical polishing (CMP),
cleaning and final inspection.
These processing stages are used to control wafer dimensions, surface roughness,
flatness and visual defect quality before final inspection and delivery.
Custom 2 Inch 4H-SI SiC Wafer Requirements
When requesting a quotation, please specify the required wafer grade,
on-axis or off-axis orientation, surface finish, quantity and any additional
technical requirements.
Frequently Asked Questions
What is a 2 Inch 4H-SI SiC Wafer?
It is a 50.8 mm semi-insulating 4H silicon carbide substrate with high electrical resistivity.
What is the resistivity of the 4H-SI SiC substrate?
Production and Research Grade substrates are specified at
>1E5 Ω·cm. The Dummy Grade specification requires
(90%) >1E5 Ω·cm.
What is the standard thickness?
The specified standard thickness is 330 ± 25 μm.
Is 4° off-axis 4H-SI SiC available?
Yes. The specification includes a 4.0° off-axis orientation toward
<11-20> with a tolerance of ±0.5°.
Is on-axis 4H-SI SiC available?
Yes. An on-axis <0001> ±0.5° specification is also available.
What wafer grades are available?
Production Grade, Research Grade and Dummy Grade are available.
Is CMP surface finishing available?
Yes. The specified CMP surface roughness is Ra ≤0.5 nm.
