4 Inch 4H-N SiC Wafer Specifications
The 4 Inch 4H-N SiC Wafer is a 100 mm N-type 4H silicon carbide substrate
available in Zero MPD Production Grade (Z Grade) and Dummy Grade (D Grade).
The substrate is specified with a 4.0° off-axis orientation toward <11-20> ±0.5°
and polished or CMP surface options.
| Parameter | Z Grade | D Grade |
|---|---|---|
| Material | 4H Silicon Carbide (4H-SiC) | |
| Conductivity Type | N-Type / Conductive | |
| Diameter | 99.5–100.0 mm | 99.5–100.0 mm |
| Thickness | 350 ± 15 μm | 350 ± 25 μm |
| Wafer Orientation | 4.0° off-axis toward <11-20> ±0.5° | |
| Micropipe Density | ≤0.2 cm-2 | ≤15 cm-2 |
| Resistivity | 0.015–0.024 Ω·cm | 0.015–0.028 Ω·cm |
| Primary Flat Orientation | Parallel to {10-10} ±5.0° | |
| Primary Flat Length | 32.5 ± 2.0 mm | |
| Secondary Flat Length | 18.0 ± 2.0 mm | |
| Secondary Flat Orientation | Si face up: 90° CW from primary flat ±5.0° | |
| Edge Exclusion | 3 mm | |
| LTV | ≤2.5 μm | ≤10 μm |
| TTV | ≤5 μm | ≤15 μm |
| Bow | ≤15 μm | ≤25 μm |
| Warp | ≤30 μm | ≤40 μm |
| Polished Surface Roughness | Ra ≤1 nm | |
| CMP Surface Roughness | Ra ≤0.2 nm | |
| TSD | ≤500 cm-2 | — |
| Packaging | Multi-wafer cassette / Single wafer container | |
4 Inch 4H-N Silicon Carbide Wafer Overview
The 4 Inch 4H-N SiC Wafer is a conductive 100 mm 4H silicon carbide substrate
designed with controlled electrical, dimensional and surface specifications.
The wafer is available in Zero MPD Production Grade (Z Grade) and Dummy Grade (D Grade)
to support different process and material requirements.
The substrate features a 4.0° off-axis orientation toward <11-20> ±0.5°.
Z Grade resistivity is specified at 0.015–0.024 Ω·cm,
while D Grade is specified at 0.015–0.028 Ω·cm.
Zero MPD Production Grade and Dummy Grade
Two wafer grades are available for the 4 inch 4H-N SiC substrate.
Zero MPD Production Grade (Z Grade) provides tighter requirements for
wafer geometry, micropipe density and surface defects. The specified micropipe density
is ≤0.2 cm-2.
Dummy Grade (D Grade) is available with wider acceptance limits for
wafer geometry and visual defects, with micropipe density specified at
≤15 cm-2.
4° Off-Axis 4H-N SiC Substrate
The 4 inch 4H-N SiC wafer is specified with a
4.0° off-axis angle toward <11-20> ±0.5°.
The primary flat is oriented parallel to {10-10} ±5.0°.
Wafer Geometry Control
For Z Grade substrates, wafer geometry is controlled to
LTV ≤2.5 μm, TTV ≤5 μm,
Bow ≤15 μm and Warp ≤30 μm.
For D Grade substrates, the specified limits are
LTV ≤10 μm, TTV ≤15 μm,
Bow ≤25 μm and Warp ≤40 μm.
Surface Finish and Roughness
Polished and CMP surface finishes are available.
The specified polished surface roughness is Ra ≤1 nm,
while the CMP surface roughness is Ra ≤0.2 nm.
Surface quality is evaluated according to the selected wafer grade,
including requirements for cracks, hex plates, polytype areas,
carbon inclusions, scratches, edge chips and surface contamination.
Visual Defect Criteria
| Inspection Item | Z Grade | D Grade |
|---|---|---|
| Edge Cracks | None | Cumulative length ≤10 mm; single length ≤2 mm |
| Hex Plates | Cumulative area ≤0.05% | Cumulative area ≤0.1% |
| Polytype Areas | None | Cumulative area ≤3% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤3% |
| Si Surface Scratches | None | Cumulative length ≤1× wafer diameter |
| Edge Chips | No chips with width ≥0.2 mm and depth ≥0.2 mm | ≤5 allowed, each ≤1 mm |
| Surface Contamination | None | None |
How SiC Wafers Are Manufactured
SiC wafer manufacturing generally includes crystal growth, crystal orientation,
slicing, grinding, polishing, chemical mechanical polishing (CMP),
cleaning and final inspection.
These processes are used to control wafer thickness, geometry, surface roughness
and defect quality before final inspection and packaging.
Packaging
4 inch 4H-N SiC wafers can be supplied in a
multi-wafer cassette or single wafer container
according to order quantity and packaging requirements.
Custom 4 Inch 4H-N SiC Wafer Requirements
When requesting a quotation, please specify the required wafer grade,
surface finish, quantity and any additional dimensional or defect requirements.
Frequently Asked Questions
What is a 4 Inch 4H-N SiC Wafer?
It is a conductive 4H silicon carbide substrate with a nominal diameter of 100 mm
and N-type electrical characteristics.
What is the diameter of the 4 inch SiC substrate?
The specified diameter range is 99.5–100.0 mm.
What thickness is available?
Z Grade is specified at 350 ±15 μm,
while D Grade is specified at 350 ±25 μm.
What is the resistivity?
Z Grade is specified at 0.015–0.024 Ω·cm,
while D Grade is specified at 0.015–0.028 Ω·cm.
Is the wafer 4° off-axis?
Yes. The specified orientation is 4.0° off-axis toward <11-20> ±0.5°.
What surface roughness is available?
The polished surface roughness is specified at Ra ≤1 nm,
while the CMP surface roughness is Ra ≤0.2 nm.
What grades are available?
Zero MPD Production Grade (Z Grade) and Dummy Grade (D Grade) are available
according to this product specification.
