2 Inch 6H-N SiC Wafer Specifications
The 2 Inch 6H-N SiC Wafer is a 50.8 mm N-type 6H silicon carbide substrate
available in Production Grade, Research Grade and Dummy Grade.
The standard wafer thickness is 330 ± 25 μm, with a specified
6H-N resistivity of 0.02–0.1 Ω·cm.
| Parameter | Specification |
|---|---|
| Material | 6H Silicon Carbide (6H-SiC) |
| Conductivity Type | N-Type |
| Diameter | 50.8 ± 0.38 mm |
| Thickness | 330 ± 25 μm |
| Grade | Production Grade / Research Grade / Dummy Grade |
| Wafer Orientation | On-axis <0001> ±0.5° |
| Resistivity | 0.02–0.1 Ω·cm |
| Micropipe Density | Production Grade: ≤5 cm-2 Research Grade: ≤15 cm-2 Dummy Grade: ≤50 cm-2 |
| Primary Flat Orientation | {10-10} ±5.0° |
| Primary Flat Length | 15.9 ± 1.7 mm |
| Secondary Flat Length | 8.0 ± 1.7 mm |
| Secondary Flat Orientation | Silicon face up: 90° CW from primary flat ±5.0° |
| Edge Exclusion | 1 mm |
| TTV | ≤15 μm |
| Bow | ≤25 μm |
| Warp | ≤25 μm |
| Surface Finish | Polish / CMP |
| Polished Surface Roughness | Ra ≤1 nm |
| CMP Surface Roughness | Ra ≤0.5 nm |
2 Inch 6H-N Silicon Carbide Wafer Overview
The 2 Inch 6H-N SiC Wafer is a 50.8 mm conductive silicon carbide substrate
with N-type electrical characteristics. The specified resistivity range is
0.02–0.1 Ω·cm, while the standard substrate thickness is
330 ± 25 μm.
Production, Research and Dummy grades are available with different micropipe density
and visual defect acceptance criteria, allowing the wafer grade to be selected according
to different research, testing and processing requirements.
On-Axis 6H-N SiC Substrate
The 2 inch 6H-N SiC substrate is specified with an
on-axis <0001> ±0.5° crystal orientation.
Customers should confirm the required material type, grade and surface finish when requesting a quotation.
Production, Research and Dummy Grades
The 2 inch 6H-N SiC wafer is available in
Production Grade, Research Grade and
Dummy Grade.
The specified micropipe density limits are:
- Production Grade: ≤5 cm-2
- Research Grade: ≤15 cm-2
- Dummy Grade: ≤50 cm-2
Visual Defect Criteria
| Inspection Item | Production Grade | Research Grade | Dummy Grade |
|---|---|---|---|
| Cracks | None | None | 1 allowed, ≤1 mm |
| Hex Plates | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% |
| Polytype Areas | None | Cumulative area ≤2% | Cumulative area ≤5% |
| Scratches | 3 scratches, cumulative length ≤1× wafer diameter | 5 scratches, cumulative length ≤1× wafer diameter | 8 scratches, cumulative length ≤1× wafer diameter |
| Edge Chips | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
| Contamination | None | None | None |
Note: Defect limits apply to the entire wafer surface except for the edge exclusion area.
Surface Finish and Wafer Geometry
Polished and CMP surface finishes are available. The specified polished surface roughness
is Ra ≤1 nm, while CMP surface roughness is
Ra ≤0.5 nm.
Wafer geometry is controlled with TTV ≤15 μm,
Bow ≤25 μm and Warp ≤25 μm.
The specified edge exclusion is 1 mm.
How SiC Wafers Are Manufactured
SiC wafer manufacturing generally includes crystal growth, crystal orientation,
slicing, grinding, polishing, chemical mechanical polishing (CMP),
cleaning and final inspection.
These processing stages are used to control wafer dimensions, surface quality,
flatness and defect performance before final inspection.
Custom 2 Inch 6H-N SiC Wafer Requirements
When requesting a quotation, please specify the required wafer grade,
surface finish, quantity and any additional technical requirements.
Frequently Asked Questions
What is a 2 Inch 6H-N SiC Wafer?
It is a 50.8 mm N-type 6H silicon carbide substrate with a specified resistivity
of 0.02–0.1 Ω·cm.
What is the standard wafer thickness?
The specified standard thickness is 330 ± 25 μm.
What is the orientation of the 6H-N SiC wafer?
The specified crystal orientation is on-axis <0001> ±0.5°.
What wafer grades are available?
Production Grade, Research Grade and Dummy Grade are available.
Is CMP surface finishing available?
Yes. CMP surface finishing is available with a specified surface roughness of
Ra ≤0.5 nm.
